Surface preparation of substrates from bulk GaN crystals

Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

Patrick Waltereit, O. Brandt, A. Trampert et al. · Nature · 2000 · 1.7K citations

Engineering, Materials Engineering, Materials Science +15

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

S. J. Rosner, Elizabeth C. Carr, M. J. Ludowise et al. · Applied Physics Letters · 1997 · 530 citations

Natural Sciences, Materials Engineering, Materials Science +17

Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on <i>R</i>-plane (1012) sapphire substrates

H. M. Ng · Applied Physics Letters · 2002 · 252 citations

Engineering, Materials Engineering, Materials Science +17

Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak

Arpan Chakraborty, B. A. Haskell, S. Keller et al. · Applied Physics Letters · 2004 · 205 citations

Engineering, Electrical Engineering, Materials Science +17

Chemical polishing of bulk and epitaxial GaN

J.L. Weyher, S. Müller, I. Grzegory et al. · Journal of Crystal Growth · 1997 · 172 citations

Engineering, Materials Engineering, Materials Science +14