Drew Hanser

Accurate dependence of gallium nitride thermal conductivity on dislocation density

C. Mion, John F. Muth, Edward A. Preble et al. · Applied Physics Letters · 2006 · 216 citations

Materials Science, Dislocation Densities, Accurate Dependence +11

GaN Substrates for III-Nitride Devices

Tanya Paskova, Drew Hanser, K. R. Evans · Proceedings of the IEEE · 2009 · 156 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

J. Limb, Dongwon Yoo, Jae‐Hyun Ryou et al. · Applied Physics Letters · 2006 · 108 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrates +11

Pinholes, Dislocations and Strain Relaxation in InGaN

B. Jahnen, M. Albrecht, W. Dorsch et al. · MRS Internet Journal of Nitride Semiconductor Research · 1998 · 77 citations

Green light emitting diodes on a-plane GaN bulk substrates

Theeradetch Detchprohm, Mingwei Zhu, Yufeng Li et al. · Applied Physics Letters · 2008 · 75 citations

Semiconductors, Electrical Engineering, Solid-state Lighting +13