K. R. Evans

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis et al. · Advanced Electronic Materials · 2017 · 1.5K citations · Full text

Engineering, Materials Science, Physics +17

Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense<i>EL</i>2-like band

D. C. Look, D. C. Walters, M. O. Manasreh et al. · Physical review. B, Condensed matter · 1990 · 285 citations

Natural Sciences, Materials Science, Physics +15

GaN Substrates for III-Nitride Devices

Tanya Paskova, Drew Hanser, K. R. Evans · Proceedings of the IEEE · 2009 · 162 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of an<i>EL</i>2-like defect

M. O. Manasreh, D. C. Look, K. R. Evans et al. · Physical review. B, Condensed matter · 1990 · 142 citations · Full text

Natural Sciences, Materials Science, Physics +17

Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films

Jacob H. Leach, Kevin Udwary, Jaime Rumsey et al. · APL Materials · 2018 · 141 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17