K. R. Evans

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao, Srabanti Chowdhury, M.A. Hollis et al. · Advanced Electronic Materials · 2017 · 1.4K citations · Full text

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a dense<i>EL</i>2-like band

D. C. Look, D. C. Walters, M. O. Manasreh et al. · Physical review. B, Condensed matter · 1990 · 285 citations

Semiconductors, Low-temperature Molecular-beam-epitaxial Gaas, Molecular-beam-epitaxial Gaas Grown +12

GaN Substrates for III-Nitride Devices

Tanya Paskova, Drew Hanser, K. R. Evans · Proceedings of the IEEE · 2009 · 156 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

Infrared absorption of deep defects in molecular-beam-epitaxial GaAs layers grown at 200 °C: Observation of an<i>EL</i>2-like defect

M. O. Manasreh, D. C. Look, K. R. Evans et al. · Physical review. B, Condensed matter · 1990 · 142 citations · Full text

Optical Materials, Engineering, Deep Defects +20

AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

C.I. Huang, Michael J. Paulus, C. Bozada et al. · Applied Physics Letters · 1987 · 138 citations · Full text