J. Limb

GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

J. Limb, Dongwon Yoo, Jae‐Hyun Ryou et al. · Applied Physics Letters · 2006 · 108 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Substrates +11

GaN HBT: toward an RF device

L. McCarthy, I. P. Smorchkova, Huili Grace Xing et al. · IEEE Transactions on Electron Devices · 2001 · 84 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes

Jae‐Hyun Ryou, W. Lee, J. Limb et al. · Applied Physics Letters · 2008 · 67 citations

Visible Leds, Engineering, Optoelectronic Devices +20

High performance GaN <i>pin</i> rectifiers grown on free-standing GaN substrates

J. Limb, Dongwon Yoo, Jae‐Hyun Ryou et al. · Electronics Letters · 2006 · 43 citations

Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors

W. Lee, Jae‐Hyun Ryou, Dongwon Yoo et al. · Applied Physics Letters · 2007 · 39 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11