W. Lee

Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes

Jae‐Hyun Ryou, W. Lee, J. Limb et al. · Applied Physics Letters · 2008 · 67 citations

Visible Leds, Engineering, Optoelectronic Devices +20

Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors

W. Lee, Jae‐Hyun Ryou, Dongwon Yoo et al. · Applied Physics Letters · 2007 · 39 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +11

Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes

Zhihao Wu, Alec M. Fischer, F. A. Ponce et al. · Applied Physics Letters · 2007 · 29 citations

Engineering, Piezoelectric Field, Green Light +17

Comparison of GaN and In0.04Ga0.96N p-Layers on the Electrical and Electroluminescence Properties of Green Light Emitting Diodes

J. Limb, W. Lee, Jae‐Hyun Ryou et al. · Journal of Electronic Materials · 2007 · 19 citations

Electrical Engineering, Solid-state Lighting, Engineering +8

High current gain InGaN/GaN HBTs with 300°C operating temperature

D.M. Keogh, P.M. Asbeck, T. Chung et al. · Electronics Letters · 2006 · 18 citations

Electrical Engineering, Electronic Devices, Engineering +8