T. Chung

High-gain coupled InGaAs quantum well InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure diode laser operation

G. Walter, T. Chung, N. Holonyak · Applied Physics Letters · 2002 · 57 citations

Categoryquantum Electronics, Photonics, Engineering +12

Coupled strained-layer InGaAs quantum-well improvement of an InAs quantum dot AlGaAs–GaAs–InGaAs–InAs heterostructure laser

T. Chung, G. Walter, N. Holonyak · Applied Physics Letters · 2001 · 48 citations

Semiconductors, Photonics, Wide-bandgap Semiconductor +10

Graded-base InGaN∕GaN heterojunction bipolar light-emitting transistors

B. Chu-Kung, M. Feng, G. Walter et al. · Applied Physics Letters · 2006 · 22 citations

Radiative Recombination, Photonics, Electrical Engineering +12

High current gain InGaN/GaN HBTs with 300°C operating temperature

D.M. Keogh, P.M. Asbeck, T. Chung et al. · Electronics Letters · 2006 · 18 citations

Electrical Engineering, Electronic Devices, Engineering +8

Modulation of high current gain (β>49) light-emitting InGaN∕GaN heterojunction bipolar transistors

B. Chu-Kung, Chao‐Hsin Wu, G. Walter et al. · Applied Physics Letters · 2007 · 18 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12