Low-temperature cleaning of Si and growth of GaAs on Si by hydrogen plasma-assisted metalorganic molecular-beam epitaxy

Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE

Akitoshi Ishizaka, Y. Shiraki · Journal of The Electrochemical Society · 1986 · 1.6K citations

Engineering, Materials Engineering, Materials Science +17

Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance Plasma

Seitaro Matsuo, Mikiho Kiuchi · Japanese Journal of Applied Physics · 1983 · 395 citations

Natural Sciences, Materials Engineering, Materials Science +17

Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca)

Steven W. Wright, H. Kroemer · Applied Physics Letters · 1980 · 132 citations

Natural Sciences, Materials Engineering, Materials Science +14

Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy

Mitsuo Kawabe, Toshio Ueda, Hidetoshi Takasugi · Japanese Journal of Applied Physics · 1987 · 70 citations

Engineering, Materials Engineering, Materials Science +17

Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenic

D. Vook, S. Reynolds, J. F. Gibbons · Applied Physics Letters · 1987 · 50 citations

Engineering, Materials Engineering, Materials Science +13