Ultraviolet radiation effects on paramagnetic defects in low-κ dielectrics for ultralarge scale integrated circuit interconnects

Abstract

The electronic properties of low-κ interlayer dielectric and etch stop layers are important issues in ultralarge scale integrated circuits development. Leakage currents are critical problems that are not well understood. A topic of current interest is ultraviolet curing of these films. We report on electron spin resonance and electrical measurements of low-κ films with and without ultraviolet exposure. This work provides fundamental understanding of the deep level defects likely involved in leakage currents.