Concepedia

Deep donors in GaSb grown by molecular beam epitaxy

I. Poole, M. E. Lee, I. R. Cleverley, А. R. Peaker, K.E. Singer

Applied Physics Letters · 1990 · 49 citations · 8 references

DOI

Concepts

Abstract

A deep state possessing similar properties to those reported for DX centers in the AlGaAs system has been observed at atmospheric pressure in GaSb moderately doped with sulfur. The first detailed deep level transient spectroscopy study of this material has revealed a large energy barrier to electron capture and a correspondingly small capture cross section for this deep level. The deep level activity of selenium- and tellurium-doped GaSb has also been investigated.

References

8

Deep donor levels (<i>D</i> <i>X</i> centers) in III-V semiconductors

P. M. Mooney · Journal of Applied Physics · 1990 · 866 citations

, , +17

Schottky barriers: An effective work function model

J. L. Freeouf, J. M. Woodall · Applied Physics Letters · 1981 · 442 citations

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Electron Localization by a Metastable Donor Level in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">GaAs</mml:mi></mml:math>: A New Mechanism Limiting the Free-Carrier Density

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A Simple Calculation of the DX Center Concentration Based on an L-Donor Model

Masami Tachikawa, M. Mizuta, Hiroshi Kukimoto et al. · Japanese Journal of Applied Physics · 1985 · 105 citations

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<i>D</i> <i>X</i>-center-like traps and persistent photoconductivity in Te-doped Al<i>x</i>Ga1−<i>x</i>Sb on GaSb

Yu Zhu, Yoshikazu Takeda, Akio Sasaki · Journal of Applied Physics · 1988 · 31 citations

, , +17