Deep-Level Impurities is a type of point defect or impurity in wide-bandgap semiconductors whose energy levels lie deep within the bandgap, significantly reducing carrier lifetime through efficient recombination or trapping, in contrast to shallow-level impurities that primarily contribute to conductivity.
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Deep-level Centers
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471
Theory of Substitutional Deep Traps in Covalent Semiconductors
Harold P. Hjalmarson, P. Vogl, D. J. Wolford et al. · Physical Review Letters · 1980 · 575 citations
Charge and phonon transport in PbTe-based thermoelectric materials
Yu Xiao, Li‐Dong Zhao · npj Quantum Materials · 2018 · 414 citations · Full text
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University of Illinois Urbana-Champaign
Urbana, United States
15 h-index
57 publications
5.2K citations
Lund University
Lund, Sweden
13 h-index
21 publications
991 citations
The Ohio State University
Columbus, United States
11 h-index
36 publications
2K citations
Toshiba (Japan)
Tokyo, Japan
10 h-index
29 publications
850 citations
Arizona State University
Tempe, United States
9 h-index
16 publications
572 citations
University of California, Santa Barbara
Santa Barbara, United States
9 h-index
24 publications
2.5K citations
Physico-Technical Institute
Izhevsk, Russia
8 h-index
21 publications
718 citations
General Electric (United States)
Boston, United States
7 h-index
11 publications
808 citations
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- Applied Physics Letters
77 publications · 4.3K citations
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- Journal of Applied Physics
74 publications · 3.1K citations
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- Physical review. B, Condensed matter
PRB · 29 publications · 1.3K citations
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- Journal of Physics C Solid State Physics
22 publications · 972 citations
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- Solid-State Electronics
18 publications · 769 citations
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