Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

Selective-area low-pressure MOCVD of GaInAsP and related materials on planar InP substrates

M.A. Gibbon, J. P. Stagg, C.G. Cureton et al. · Semiconductor Science and Technology · 1993 · 152 citations

Engineering, Materials Engineering, Materials Science +14

Surface Reaction Kinetics in Metalorganic Vapor Phase Epitaxy of GaAs through Analyses of Growth Rate Profile in Wide-Gap Selective-Area Growth

Ho-jin Oh, Masakazu Sugiyama, Yoshiaki Nakano et al. · Japanese Journal of Applied Physics · 2003 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +17

Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy

J. Décobert, G. Patriarche · Journal of Applied Physics · 2002 · 48 citations

Engineering, Materials Engineering, Materials Science +17

Simulation and characterization of the selective area growth process

M. Afshar Alam, R. People, E. D. Isaacs et al. · Applied Physics Letters · 1999 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +6

InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy

Taku Tsuchiya, J. Shimizu, Manabu Shirai et al. · Journal of Crystal Growth · 2005 · 38 citations

Engineering, Materials Engineering, Materials Science +15