Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

F. Lelarge, B. Dagens, Jérémie Renaudier, +13

IEEE Journal of Selected Topics in Quantum Electronics

Quantum PhotonicsEngineeringLaser ScienceQd LasersLaser Applications +21

Demonstration of 20 Gbit/s all-optical logic XORin integrated SOA-based interferometric wavelength converter

T. Fjelde, D. Wolfson, A. Kloch, +6

Electronics Letters

Low-Threshold Heterogeneously Integrated InP/SOI Lasers With a Double Adiabatic Taper Coupler

M. Lamponi, Shahram Keyvaninia, Christophe Jany, +8

IEEE Photonics Technology Letters

Silicon WaveguideOptical MaterialsEngineeringLaser ScienceOptical Transmission System +14

Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core

F. Lelarge, B. Rousseau, B. Dagens, +3

IEEE Photonics Technology Letters

PhotonicsQuantum PhotonicsEngineeringLaser SciencePhysics +13

Novel scheme for simple label-swapping employing XOR logic in an integrated interferometric wavelength converter

T. Fjelde, A. Kloch, D. Wolfson, +6

IEEE Photonics Technology Letters

PhotonicsEngineeringMixed-signal Integrated CircuitSimultaneous Wavelength ConversionAll-optical Label +10

45 GHz self-pulsation with narrow linewidth in quantum dot Fabry-Perot semiconductor lasers at 1.5 µm

J. Renaudier, R. Brenot, B. Dagens, +8

Electronics Letters

Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy

J. Décobert, N. Dupuis, Pierre‐Yves Lagrée, +6

Journal of Crystal Growth

Materials ScienceMaterials EngineeringChemical EngineeringEngineeringCrystal Growth Technology +7

Effect of layer stacking and p-type doping on the performance of InAs∕InP quantum-dash-in-a-well lasers emitting at 1.55μm

G. Moreau, S. Azouigui, D.-Y. Cong, +10

Applied Physics Letters

P-type DopingEngineeringLaser ScienceLaser ApplicationsLaser Material +14

Widely wavelength tunable hybrid III–V/silicon laser with 45 nm tuning range fabricated using a wafer bonding technique

A. Le Liepvre, Christophe Jany, A. Accard, +8

Optical MaterialsEngineeringDevice IntegrationIntegrated CircuitsSilicon On Insulator +14

Design optimization of all-active Mach-Zehnder wavelength converters

B. Dagens, C. Janz, D. Leclerc, +5

IEEE Photonics Technology Letters

10-Gb/s Counterpropagative OperationPhotonicsElectrical EngineeringEngineeringOptical Transmission System +9