Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core

Abstract

Self-organized InAs quantum-dot (QD) lasers emitting at 1.5 μm were grown by gas source molecular beam epitaxy on (100) InP substrates. Room temperature continuous-wave (CW) operation of QD-based buried ridge stripe lasers is reported. We investigated experimentally the relevant CW performances of as-cleaved InP-based QD lasers for telecom applications such as temperature properties (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> =56 K), infinite length threshold current density (J/sub /spl infin///spl sim/150 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> per QDs layer) and internal efficiency (0.37 W/A). Lasing in pulsed mode is observed for cavity length as short as 200 μm with a threshold current of about 37 mA, demonstrating the high gain of the QD's active core. In addition, the Henry parameter of these InP-based QD lasers is experimentally determined using the Hakki-Paoli method (/spl alpha//sub H//spl sim/2.2).