THz optical-frequency conversion of 1 Gb/s-signals using highly nondegenerate four-wave mixing in an InGaAsP semiconductor laser

S. Murata, Akihisa Tomita, J. Shimizu, +1

IEEE Photonics Technology Letters

Thz PhotonicsOptical MaterialsEngineeringInjection-locking TechniqueLaser Applications +21

Clinical features and a mutation with late onset of limb girdle muscular dystrophy 2B

Toshinari Takahashi, Masashi Aoki, Naoki Suzuki, +29

Journal of Neurology Neurosurgery & Psychiatry

Photoluminescence from a Bulk Defect near the Surface of an <i>n</i>-TiO₂ (Rutile) Electrode in Relation to an Intermediate of Photooxidation Reaction of Water

Yoshihiro Nakato, Hideyuki Akanuma, Yoshifumi Magari, +3

The Journal of Physical Chemistry B

Materials SciencePhotoluminescenceEngineeringPhotochemistryInorganic Photochemistry +12

Observation of highly nondegenerate four-wave mixing (≳1 THz) in an InGaAsP multiple quantum well laser

S. Murata, Akihisa Tomita, J. Shimizu, +2

Applied Physics Letters

Thz PhotonicsEngineeringLaser ScienceCavity QedLaser Applications +14

Analysis of differential gain in InGaAs-InGaAsP compressive and tensile strained quantum-well lasers and its application for estimation of high-speed modulation limit

M. Nido, K. Naniwae, J. Shimizu, +2

IEEE Journal of Quantum Electronics

EngineeringLaser ScienceLaser ApplicationsLaser MaterialMqw Lasers +16

Optical-confinement-factor dependencies of the K factor, differential gain, and nonlinear gain coefficient for 1.55 mu m InGaAs/InGaAsP MQW and strained-MQW lasers

J. Shimizu, Hirohito Yamada, S. Murata, +3

IEEE Photonics Technology Letters

PhotonicsEngineeringStrained-mqw LasersPhysicsLaser Science +12

InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy

Taku Tsuchiya, J. Shimizu, Manabu Shirai, +1

Journal of Crystal Growth

Materials ScienceMaterials EngineeringInp SubstrateEngineeringCrystal Growth Technology +9

40 Gbit/s electroabsorption modulators with impedance-controlled electrodes

Manabu Shirai, H. Arimoto, K. Watanabe, +11

Electronics Letters

Advantages of optical modulators with InGaAlSa/InGaAlAs MQW structure

J. Shimizu, Masahiro Aoki, Taku Tsuchiya, +4

Electronics Letters

Wide temperature range, from 0 to 85°C, operation of a 1.55 µm, 40 Gbit/s InGaAlAs electro-absorption optical modulator

H. Arimoto, J. Shimizu, Masafumi Shirai, +1

Electronics Letters