InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy

High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications

Chung-En Zah, R. Bhat, Bhadresh Pathak et al. · IEEE Journal of Quantum Electronics · 1994 · 338 citations

Engineering, Materials Engineering, Materials Science +17

MOVPE growth of SiO2-masked InP structures at reduced pressures

A. R. Clawson, Cynthia Hanson, T.T. Vu · Journal of Crystal Growth · 1986 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +10

High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peak) InGaAs/InGaAsP MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure

M. Aoki, Masaki Suzuki, Masaharu Takahashi et al. · Electronics Letters · 1992 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition

Kenji Hiruma, Toru Haga, M. Miyazaki · Journal of Crystal Growth · 1990 · 48 citations

Natural Sciences, Materials Engineering, Materials Science +17

Studies on the selective OMVPE of (Ga,In)/(As,P)

C. Caneau, R. Bhat, M. Frei et al. · Journal of Crystal Growth · 1992 · 42 citations

Natural Sciences, Chemistry, Inorganic Chemistry +1