MOVPE growth of SiO2-masked InP structures at reduced pressures

A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy

Maarten Leys, Hendrik Veenvliet · Journal of Crystal Growth · 1981 · 170 citations

Materials Engineering, Electrical Engineering, Engineering +7

A critical appraisal of growth mechanisms in MOVPE

G. B. Stringfellow · Journal of Crystal Growth · 1984 · 169 citations

Biology, Pattern Formation, Fitness +5

Indirect plasma deposition of silicon dioxide

L. G. Meiners · Journal of Vacuum Science and Technology · 1982 · 122 citations

Indirect plasma deposition of silicon dioxide

Vacuum · 1985 · 112 citations

Engineering, Nonthermal Plasma, Surface Science +4

A New Method for Growing GaAs Epilayers by Low Pressure Organometallics

J.P. Duchemin, Muriel Bonnet, F. Koelsch et al. · Journal of The Electrochemical Society · 1979 · 105 citations

Materials Science, Materials Engineering, Semiconductors +13