Surface migration and reaction mechanism during selective growth of GaAs and AlAs by metalorganic chemical vapor deposition

Metallurgical Thermochemistry.

J. A. Charles · Chemical Engineering Science · 1980 · 1.6K citations

Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence

D.H. Reep, S. K. Ghandhi · Journal of The Electrochemical Society · 1983 · 294 citations

Materials Science, Electrical Engineering, Gaas Epitaxial Layers +15

Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs

C.A. Larsen, N.I. Buchan, G. B. Stringfellow · Applied Physics Letters · 1988 · 152 citations

Engineering, Crystal Growth Technology, Organic Chemistry +17

Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source

Eisuke Tokumitsu, Yoshimitsu Kudou, Makoto Konagai et al. · Journal of Applied Physics · 1984 · 150 citations

Semiconductors, Materials Science, Sio2 Film +11

Selective growth of GaAs in the MOMBE and MOCVD systems

H. Heinecke, A. Brauers, F. Grafahrend et al. · Journal of Crystal Growth · 1986 · 130 citations

Semiconductors, Electrical Engineering, Mocvd Systems +4