Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing

Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

Carey M. Tanner, Ya-Chuan Perng, Christopher L. Frewin et al. · Applied Physics Letters · 2007 · 172 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Annealing of Al₂O₃thin films prepared by atomic layer deposition

Lei Zhang, Hai Jiang, C Liu et al. · Journal of Physics D Applied Physics · 2007 · 171 citations

Natural Sciences, Materials Engineering, Materials Science +17

Generation of very fast states by nitridation of the SiO2/SiC interface

Hironori Yoshioka, Takashi Nakamura, Tsunenobu Kimoto · Journal of Applied Physics · 2012 · 167 citations · Full text

Engineering, Materials Science, Physics +17

Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

Heiji Watanabe, Takuji Hosoi, Takashi Kirino et al. · Applied Physics Letters · 2011 · 129 citations

Engineering, Materials Engineering, Materials Science +17

Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

Gang Liu, A. C. Ahyi, Yi Xu et al. · IEEE Electron Device Letters · 2013 · 109 citations

Engineering, Electrical Engineering, Materials Science +17