Silicon—a new substrate for GaN growth

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Hiroshi Amano, M. Kito, Kazumasa Hiramatsu et al. · Japanese Journal of Applied Physics · 1989 · 2K citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Hole Compensation Mechanism of P-Type GaN Films

Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh et al. · Japanese Journal of Applied Physics · 1992 · 1.1K citations

Engineering, Materials Engineering, Materials Science +17

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

A. Dadgar, J. Bläsing, Annette Diez et al. · Japanese Journal of Applied Physics · 2000 · 330 citations

Engineering, Materials Engineering, Materials Science +17

The Use of Metalorganics in the Preparation of Semiconductor Materials

H. M. Manasevit, F. M. Erdmann, W. I. Simpson · Journal of The Electrochemical Society · 1971 · 296 citations

Engineering, Chemistry, Materials Science +12

Ultraviolet and violet GaN light emitting diodes on silicon

Supratik Guha, N. A. Bojarczuk · Applied Physics Letters · 1998 · 290 citations

Engineering, Materials Engineering, Materials Science +17