Comparison of carbon doping of InGaAs and GaAs by CBr4 using hydrogen or nitrogen as carrier gas in LP-MOVPE

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech, M. A. Tischler, P.-J. Wang et al. · Applied Physics Letters · 1988 · 180 citations

Engineering, Materials Engineering, Materials Science +14

Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 − y, TMG and AsH3

N.I. Buchan, T. F. Kuech, G. Scilla et al. · Journal of Crystal Growth · 1991 · 90 citations

Engineering, Materials Engineering, Materials Science +13

A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs

S. A. Stockman, A.W. Hanson, C. M. Colomb et al. · Journal of Electronic Materials · 1994 · 45 citations

Engineering, Materials Engineering, Materials Science +12

Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy

T. H. Chiu, J. E. Cunningham, J. A. Ditzenberger et al. · Journal of Crystal Growth · 1991 · 40 citations

Engineering, Materials Science, Physics +12

Carbon doping and etching effects of CBr4 during metalorganic chemical vapor deposition of GaAs and AlAs

Kouta Tateno, Y. Kohama, Chikara Amano · Journal of Crystal Growth · 1997 · 40 citations

Engineering, Materials Engineering, Materials Science +12