A.W. Hanson

Reliability of large periphery GaN-on-Si HFETs

Sameer Singhal, T. Li, A. Chaudhari et al. · Microelectronics Reliability · 2006 · 87 citations

Electrical Engineering, Engineering, Applied Physics +2

Growth of carbon-doped <i>p</i>-type In<i>x</i>Ga1−<i>x</i>As (0&amp;lt;<i>x</i>≤0.53) by metalorganic chemical vapor deposition

S. A. Stockman, A.W. Hanson, G. E. Stillman · Applied Physics Letters · 1992 · 67 citations

Materials Science, Semiconductors, Chemical Engineering +13

Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base

A.W. Hanson, S. A. Stockman, G. E. Stillman · IEEE Electron Device Letters · 1993 · 67 citations

Engineering, Power Electronic Systems, Common-base Breakdown Voltage +16

GaN-ON-Si Failure Mechanisms and Reliability Improvements

Sameer Singhal, J. C. Roberts, P. Rajagopal et al. · 2006 · 59 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Passivation of carbon acceptors during growth of carbon-doped GaAs, InGaAs, and HBTs by MOCVD

S. A. Stockman, A.W. Hanson, S. M. Lichtenthal et al. · Journal of Electronic Materials · 1992 · 57 citations

Electrical Engineering, Engineering, Applied Physics +5