S. A. Stockman

High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

Michael R. Krames, Mari Ochiai-Holcomb, G. E. Höfler et al. · Applied Physics Letters · 1999 · 454 citations

Engineering, Electrical Engineering, Materials Science +17

High-power AlGaInN flip-chip light-emitting diodes

Jonathan J. Wierer, D. A. Steigerwald, Michael R. Krames et al. · Applied Physics Letters · 2001 · 413 citations

Engineering, Electrical Engineering, Materials Science +17

High Power LEDs - Technology Status and Market Applications

Frank M. Steranka, J Bhat, D. M. Collins et al. · physica status solidi (a) · 2002 · 225 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

Yinchu Shen, Jonathan J. Wierer, Michael R. Krames et al. · Applied Physics Letters · 2003 · 138 citations

Engineering, Electrical Engineering, Materials Science +17

Performance of High-Power AlInGaN Light Emitting Diodes

A.Y. Kim, W. G�tz, D. A. Steigerwald et al. · physica status solidi (a) · 2001 · 111 citations · Full text

Engineering, Electrical Engineering, Materials Science +14