Performance of High-Power AlInGaN Light Emitting Diodes

Abstract

The performance of high-power AlInGaN light emitting diodes (LEDs) is characterized by light output–current–voltage (L–I–V) measurements for devices with peak emission wavelengths ranging from 428 to 545 nm. The highest external quantum efficiency (EQE) is measured for short wavelength LEDs (428 nm) at ≈29%. EQE decreases with increasing wavelength, reaching ≈13% at 527 nm. With low forward voltages ranging from ≈3.3 to ≈2.9 V at a drive current density of 50 A/cm2, these LEDs exhibit power conversion efficiencies ranging from ≈26% (428 nm) to ≈10% (527 nm).