Nathan F. Gardner

Auger recombination in InGaN measured by photoluminescence

Yinchu Shen, Gerd Mueller, Satoshi Watanabe et al. · Applied Physics Letters · 2007 · 1.1K citations

Semiconductors, Photonics, Electrical Engineering +12

High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

Michael R. Krames, Mari Ochiai-Holcomb, G. E. Höfler et al. · Applied Physics Letters · 1999 · 453 citations

Optical Materials, Engineering, High-power Truncated-inverted-pyramid +17

Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

Nathan F. Gardner, Gerd Müller, Yinchu Shen et al. · Applied Physics Letters · 2007 · 436 citations

Auger Recombination, Engineering, Optoelectronic Devices +18

High-power AlGaInN flip-chip light-emitting diodes

Jonathan J. Wierer, D. A. Steigerwald, Michael R. Krames et al. · Applied Physics Letters · 2001 · 413 citations

Power Fcled, White Oled, Electrical Engineering +12

InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures

Jonathan J. Wierer, Michael R. Krames, J. E. Epler et al. · Applied Physics Letters · 2004 · 377 citations

Semiconductors, Photonics, Electrical Engineering +15