Applied Physics Letters · 2007 · 436 citations · 10 references
Auger RecombinationEngineeringOptoelectronic DevicesMaximum Quantum EfficiencySemiconductorsElectronic DevicesDh LedsPhotodetectorsLight-emitting DiodesCompound SemiconductorMaterials SciencePhotonicsElectrical EngineeringOptoelectronic MaterialsAluminum Gallium NitrideCategoryiii-v SemiconductorQuantum EfficiencySolid-state LightingApplied PhysicsGan Power DeviceOptoelectronics
Auger recombination is determined to be the limiting factor for quantum efficiency for InGaN–GaN (0001) light-emitting diodes (LEDs) at high current density. High-power double-heterostructure (DH) LEDs are grown by metal-organic chemical vapor deposition. By increasing the active layer thickness, DH LEDs can reach a maximum in quantum efficiency at current densities above 200A∕cm2. Encapsulated thin-film flip-chip DH LEDs with peak wavelength of 432nm have an external quantum efficiency of 40% and output power of 2.3W at 2A.
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Auger recombination in InGaN measured by photoluminescence
Yinchu Shen, Gerd Mueller, Satoshi Watanabe et al. · Applied Physics Letters · 2007 · 1.1K citations
High-power AlGaInN flip-chip light-emitting diodes
Jonathan J. Wierer, D. A. Steigerwald, Michael R. Krames et al. · Applied Physics Letters · 2001 · 413 citations
High performance thin-film flip-chip InGaN–GaN light-emitting diodes
O.B. Shchekin, J. E. Epler, T. A. Trottier et al. · Applied Physics Letters · 2006 · 333 citations