Yinchu Shen

Auger recombination in InGaN measured by photoluminescence

Yinchu Shen, Gerd Mueller, Satoshi Watanabe et al. · Applied Physics Letters · 2007 · 1.1K citations

Semiconductors, Photonics, Electrical Engineering +12

Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

Nathan F. Gardner, Gerd Müller, Yinchu Shen et al. · Applied Physics Letters · 2007 · 436 citations

Auger Recombination, Engineering, Optoelectronic Devices +18

High-power AlGaInN flip-chip light-emitting diodes

Jonathan J. Wierer, D. A. Steigerwald, Michael R. Krames et al. · Applied Physics Letters · 2001 · 413 citations

Power Fcled, White Oled, Electrical Engineering +12

Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

Yinchu Shen, Jonathan J. Wierer, Michael R. Krames et al. · Applied Physics Letters · 2003 · 137 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Improvement in light-output efficiency of near-ultraviolet InGaN–GaN LEDs fabricated on stripe patterned sapphire substrates

Ya‐Ju Lee, T. C. Hsu, Hao‐Chung Kuo et al. · Materials Science and Engineering B · 2005 · 62 citations

Light-output Efficiency, Photonics, Electrical Engineering +9