Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 − y, TMG and AsH3 - Concepedia

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Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 − y, TMG and AsH3

90

Citations

21

References

1991

Year

N.I. Buchan, T. F. Kuech, G. Scilla, F. Cardone

Journal of Crystal Growth

Materials EngineeringMaterials ScienceChyx4 − YEngineeringApplied PhysicsCarbon IncorporationGrown GaasMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor

References

	Year	Citations

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