Applied Physics Letters · 1993 · 111 citations · 11 references
SemiconductorsMaterials ScienceElectrical EngineeringHeat TreatmentConventional Inp LasersEngineeringAdvanced Laser ProcessingSemiconductor LasersApplied PhysicsLaser ApplicationsInp WafersLaser MaterialOptoelectronic DevicesDirectly-bonded GaasHigh-power LasersCompound SemiconductorSemiconductor DeviceOptoelectronics
The electrical characteristics of directly bonded GaAs/InP heterointerfaces have been investigated for the first time. The mirror-polished surfaces of GaAs and InP wafers were put face to face and bonded by heat treatment at temperatures ranging from 450 to 700 °C. The wafers were successfully bonded without using any solders at all the temperatures tested. 1.3 μm InP/GaInAsP lasers were fabricated on GaAs substrates using direct bonding at 450 °C, and room-temperature lasing operation has been achieved with the threshold current identical to that of conventional InP lasers.
11
Gallium arsenide and other compound semiconductors on silicon
S. F. Fang, K. Adomi, Swaminathan P. Iyer et al. · Journal of Applied Physics · 1990 · 583 citations
Semiconductors, Materials Science, Electrical Engineering +13
Silicon-to-silicon direct bonding method
Masaru Shimbo, K. Furukawa, K. Fukuda et al. · Journal of Applied Physics · 1986 · 505 citations