Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates

Abstract

A technique, namely bonding by atomic rearrangement has been invented to realize high quality heteroepitaxy for lasers and optoelectronics. High performance lasers of 1.5 μm wavelength have been fabricated on GaAs substrates using this method. The laser has the same threshold current and quantum efficiency as lasers on InP substrates. No performance degradation has been observed. The transmission electron microscopic results show that the heteroepitaxy is excellent, without a single threading dislocation or stacking fault.