Masahiro Akiyama - Concepedia

Author

Masahiro Akiyama

Also Known As

M Akiyama, M. Akiyama, Masahiro AKIYAMA, Masahiro Akiyama, Masahiro Akiyama Masahiro Akiyama, Michinoshin Akiyama, Mizuho Imamaki

179

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Oki Electric Industry (Japan)Kumamoto University Kyoto Institute of Technology Kagoshima University

About

Masahiro Akiyama is an author at Oki Electric Industry (Japan) specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	43	1.9K
2	Applied Physics	20	31	1.5K
3	Chemical Engineering	3	3	69
4	Natural Sciences	1	1	20
5	Chemistry	1	1	30

Masahiro Akiyama

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi Japanese Journal of Applied Physics SemiconductorsHeat TreatmentSi SubstrateElectrical EngineeringEngineering	1984	363
Growth of GaAs on Si by MOVCD Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsSemiconductor Device FabricationMicroelectronics	1984	198
Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy Seiji Nishi, Hiroki Inomata, Masahiro Akiyama, Japanese Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	1985	94
A Repetitive Solid State Marx-Type Pulsed Power Generator Using Multistage Switch-Capacitor Cells Tatsuro Sakamoto, Alireza Nami, Masahiro Akiyama, IEEE Transactions on Plasma Science Electrical EngineeringNovel DevelopmentEngineeringHigh Voltage EngineeringComputer Engineering	2012	87
Growth of high quality GaAs layers on Si substrates by MOCVD Masahiro Akiyama, Yoshihiro Kawarada, Takashi Ueda, Journal of Crystal Growth Electrical EngineeringEpitaxial GrowthEngineeringNanoelectronicsSi Substrates	1986	85
Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate Takashi Ueda, Seiji Nishi, Yoshihiro Kawarada, Japanese Journal of Applied Physics Electrical EngineeringSi SubstrateEngineeringEpitaxial GrowthOffset Direction	1986	77
Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate T. Nonaka, Masahiro Akiyama, Yoshihiro Kawarada, Japanese Journal of Applied Physics Semiconductor TechnologyElectrical EngineeringGaas Epitaxial LayersEngineeringElectronic Engineering	1984	73
Nonreciprocal Phase-Shift Composite Right/Left Handed Transmission Lines and Their Application to Leaky Wave Antennas Tetsuya Ueda, Ken Horikawa, Masahiro Akiyama, IEEE Transactions on Antennas and Propagation Electrical EngineeringEngineeringNew TypeTheir ApplicationAntenna	2009	68
Dielectric-Resonator-Based Composite Right/Left-Handed Transmission Lines and Their Application to Leaky Wave Antenna Tetsuya Ueda, Naobumi Michishita, Masahiro Akiyama, IEEE Transactions on Microwave Theory and Techniques Electromagnetic MetamaterialsEngineeringConfiguration ParametersNegative-index MetamaterialTheir Application	2008	57
Management and 1‐Year Outcomes of Patients With Newly Diagnosed Atrial Fibrillation and Chronic Kidney Disease: Results From the Prospective GARFIELD‐AF Registry Shinya Goto, Pantep Angchaisuksiri, Jean‐Pierre Bassand, Journal of the American Heart Association	2019	54

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