Katsuzo Kaminishi

Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD

Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi · Japanese Journal of Applied Physics · 1984 · 363 citations

Engineering, Electrical Engineering, Materials Science +17

Growth of GaAs on Si by MOVCD

Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi · Journal of Crystal Growth · 1984 · 199 citations

Engineering, Materials Engineering, Materials Science +10

Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy

Seiji Nishi, Hiroki Inomata, Masahiro Akiyama et al. · Japanese Journal of Applied Physics · 1985 · 94 citations

Engineering, Materials Engineering, Materials Science +17

Growth of high quality GaAs layers on Si substrates by MOCVD

Masahiro Akiyama, Yoshihiro Kawarada, Takashi Ueda et al. · Journal of Crystal Growth · 1986 · 86 citations

Engineering, Materials Engineering, Materials Science +14

Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate

Takashi Ueda, Seiji Nishi, Yoshihiro Kawarada et al. · Japanese Journal of Applied Physics · 1986 · 77 citations

Engineering, Materials Engineering, Materials Science +17