Katsuzo Kaminishi

Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD

Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi · Japanese Journal of Applied Physics · 1984 · 363 citations

Semiconductors, Heat Treatment, Si Substrate +11

Growth of GaAs on Si by MOVCD

Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi · Journal of Crystal Growth · 1984 · 198 citations

Electrical Engineering, Engineering, Applied Physics +4

Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy

Seiji Nishi, Hiroki Inomata, Masahiro Akiyama et al. · Japanese Journal of Applied Physics · 1985 · 94 citations

Semiconductors, Materials Science, Electrical Engineering +14

Growth of high quality GaAs layers on Si substrates by MOCVD

Masahiro Akiyama, Yoshihiro Kawarada, Takashi Ueda et al. · Journal of Crystal Growth · 1986 · 85 citations

Electrical Engineering, Epitaxial Growth, Engineering +8

Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate

Takashi Ueda, Seiji Nishi, Yoshihiro Kawarada et al. · Japanese Journal of Applied Physics · 1986 · 77 citations

Electrical Engineering, Si Substrate, Engineering +13