Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy

Abstract

Good surface morphological single domain GaAs films were successfully grown on a whole area of 2-inch Si(100) substrates by molecular beam epitaxy (MBE). Si substrates were first thermally cleaned at 850°C, 100 Å GaAs buffer layers were then grown at low substrate temperatures and, finally, 1.5 µm GaAs layers were grown at 600°C. It was found that the first thermal cleaning of Si is important in growing single domain GaAs and the growth temperatures of the buffer layer had to be low to get a good morphological surface.