Metalorganic chemical vapor deposition of group III nitrides—a discussion of critical issues

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P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

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GaN Growth Using GaN Buffer Layer

Shuji Nakamura Shuji Nakamura · Japanese Journal of Applied Physics · 1991 · 1.3K citations

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Hole Compensation Mechanism of P-Type GaN Films

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