Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications

Growth and Physical Properties of LPCVD Polycrystalline Silicon Films

G. Harbeke, L. Krausbauer, E. F. Steigmeier et al. · Journal of The Electrochemical Society · 1984 · 245 citations

Natural Sciences, Materials Engineering, Materials Science +17

A new technique for producing large-area as-deposited zero-stress LPCVD polysilicon films: the MultiPoly process

Jie Yang, H. Kahn, Anqiang He et al. · Journal of Microelectromechanical Systems · 2000 · 117 citations

Natural Sciences, Materials Engineering, Materials Science +17

Development of a high-growth rate 3C-SiC on Si CVD process

M. Reyes, Y. Shishkin, S. Harvey et al. · MRS Proceedings · 2006 · 49 citations

Engineering, Materials Engineering, Materials Science +13

High etch rates of SiC in magnetron enhanced SF6 plasmas

G. F. McLane, J. R. Flemish · Applied Physics Letters · 1996 · 44 citations

Natural Sciences, Materials Engineering, Materials Science +15

Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS architectures

S. Frederico, C. Hibert, R. Fritschi et al. · 2003 · 40 citations · Full text

Engineering, Electrical Engineering, Materials Science +17