Concepedia

Oxide–nitride–oxide layer optimisation for reliable embedded SONOS memories

R. van Schaijk, M. van Duuren, Wan Yuet Mei, K. van der Jeugd, A. Rothschild, M. Demand

Microelectronic Engineering · 2004 · 10 citations · 4 references

Concepts

EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsFault-tolerant ComputingMicroelectronicsDevice ReliabilityEmbedded Memory BlocksMemory DevicesMemory HierarchyMemory Subsystem DesignOxide SemiconductorsCmos ReliabilityDevice OptimizationGate Oxide ReliabilityGate OxidesMemory Circuit DesignNon-volatile Memory DesignPassivation Of Oxides

References

4

Transient conduction in multidielectric silicon–oxide–nitride–oxide semiconductor structures

Harald Bachhofer, H. Reisinger, E. Bertagnolli et al. · Journal of Applied Physics · 2001 · 142 citations

Engineering, Electrical Engineering, Microelectronics +16

High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technology

Myung Kwan Cho, D.M. Kim · IEEE Electron Device Letters · 2000 · 79 citations

Engineering, Computer Engineering, Electrical Engineering +14

Gate layout and bonding pad structure of a RF n-MOSFET for low noise performance

Cheon Soo Kim, Jungwoo Park, Hyun Kyu Yu et al. · IEEE Electron Device Letters · 2000 · 46 citations

Engineering, Electrical Engineering, Ground Improvement +16

Embedded HIMOS(R) flash memory in 0.35 μm and 0.25 μm CMOS technologies

D. Wellekens, Jan Van Houdt, L. Haspeslagh et al. · IEEE Transactions on Electron Devices · 2000 · 22 citations

Engineering, Computer Engineering, Electrical Engineering +13