IEEE Electron Device Letters · 2000 · 79 citations · 9 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice ScalingMemory DevicesFlash MemoryFlash Memory DevicesFlash Memory ProgrammingFloating-gate MemoryMemory Circuit DesignNon-volatile Memory DesignNonvolatile Memory DevicesParallel Programming
Nonvolatile SONOS memory cells, fabricated by standard flash EEPROM technology are characterized, in comparison with floating gate memory devices. Its programming speed is comparable with the state-of-the-art flash EEPROM cells, while the erase speed is faster and over-erase-free. The SONOS cells do not suffer from the drain turn-on effect, making it is possible to perform parallel multi bit-line programming and to achieve tighter distributions of programmed and erased threshold voltages. These features render SONOS cells attractive for direct utilization in existing flash EEPROM technology with its forward reading scheme.
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A silicon nanocrystals based memory
Sandip Tiwari, Farhan Rana, Hussein Hanafi et al. · Applied Physics Letters · 1996 · 1.6K citations
Volatile and non-volatile memories in silicon with nano-crystal storage
S. Tiwari, Farhan Rana, K. Chan et al. · 2002 · 200 citations