K. Ishii

Demonstration, Analysis, and Device Design Considerations for Independent DG MOSFETs

Meishoku Masahara, Yongxun Liu, Kunihiro Sakamoto et al. · IEEE Transactions on Electron Devices · 2005 · 130 citations

Engineering, Electrical Engineering, Circuit Theory +16

Highly suppressed short-channel effects in ultrathin SOI n-MOSFETs

E. Suzuki, K. Ishii, S. Kanemaru et al. · IEEE Transactions on Electron Devices · 2000 · 121 citations

Engineering, Electrical Engineering, Materials Science +13

A Highly Threshold Voltage-Controllable 4T FinFET with an 8.5-nm-Thick Si-Fin Channel

Yongxun Liu, Meishoku Masahara, K. Ishii et al. · IEEE Electron Device Letters · 2004 · 106 citations

Engineering, Electrical Engineering, Semiconductor Devices +16

Ideal rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated using orientation-dependent wet etching

Yongxun Liu, K. Ishii, Toshiyuki Tsutsumi et al. · IEEE Electron Device Letters · 2003 · 102 citations

Engineering, Electrical Engineering, Electronic Materials +16

A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures

E. Suzuki, Hisato Hiraishi, K. Ishii et al. · IEEE Transactions on Electron Devices · 1983 · 90 citations

Engineering, Computer Engineering, Electrical Engineering +17