Simulation study on 4H–SiC power devices with high-k dielectric FP terminations

Threshold energy effect on avalanche breakdown voltage in semiconductor junctions

Y. Okuto, C.R. Crowell · Solid-State Electronics · 1975 · 261 citations

Engineering, Electrical Engineering, Materials Science +14

Insulator investigation on SiC for improved reliability

Lori A. Lipkin, John W. Palmour · IEEE Transactions on Electron Devices · 1999 · 221 citations

Engineering, Electrical Engineering, Materials Science +17

High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination

V. Saxena, Jian Su, A. J. Steckl · IEEE Transactions on Electron Devices · 1999 · 198 citations

Engineering, Electrical Engineering, Materials Science +17

Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

J.H. Zhao, P. Alexandrov, X. Li · IEEE Electron Device Letters · 2003 · 103 citations

Engineering, Electrical Engineering, Materials Science +17

Impact Ionization Coefficients in 4H-SiC

W.S. Loh, Beng Koon Ng, Jo Shien Ng et al. · IEEE Transactions on Electron Devices · 2008 · 86 citations

Engineering, Electrical Engineering, Materials Science +16