Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer

Strain-related phenomena in GaN thin films

C. Kisielowski, Joachim Krüger, S. Ruvimov et al. · Physical review. B, Condensed matter · 1996 · 886 citations

Natural Sciences, Materials Engineering, Materials Science +17

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

Natural Sciences, Materials Engineering, Materials Science +17

Contribution of free-electron recombination to the luminescence spectra of thick GaN films grown by hydride vapor phase epitaxy

B. Arnaudov, T. Paskova, Ewa M. Goldys et al. · Journal of Applied Physics · 1999 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +17

Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer

E. Valcheva, T. Paskova, Sukkaneste Tungasmita et al. · Applied Physics Letters · 2000 · 33 citations

Engineering, Materials Engineering, Materials Science +14

Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples

A. Kaschner, A. Hoffmann, C. Thomsen et al. · Applied Physics Letters · 2000 · 31 citations

Natural Sciences, Materials Engineering, Materials Science +15