The temperature-dependence of threshold voltage of N-MOSFETs with nonuniform substrate doping

Threshold voltage model for deep-submicrometer MOSFETs

zhenglin liu, Chenming Hu, Jiawei Huang et al. · IEEE Transactions on Electron Devices · 1993 · 480 citations

Engineering, Electrical Engineering, Electronic Materials +16

A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime

D.B.M. Klaassen · Solid-State Electronics · 1992 · 467 citations

Engineering, Electrical Engineering, Materials Engineering +17

Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level

Solid-State Electronics · 1981 · 266 citations

Engineering, Electrical Engineering, Materials Science +14

Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level

Microelectronics Reliability · 1982 · 217 citations

Engineering, Electrical Engineering, Materials Science +14

Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs

Tor A. Fjeldly, M. S. Shur · IEEE Transactions on Electron Devices · 1993 · 160 citations

Engineering, Electrical Engineering, Circuit Theory +13