An area efficient body contact for low and high voltage SOI MOSFET devices

SOI technology for the GHz era

G. Shahidi · IBM Journal of Research and Development · 2002 · 192 citations

Engineering, Computer Engineering, Electrical Engineering +13

Design and optimization of double-resurf high-voltage lateral devices for a manufacturable process

Mohamed A. Imam, Zia Hossain, Mohammed Tanvir Quddus et al. · IEEE Transactions on Electron Devices · 2003 · 73 citations

Engineering, Computer Engineering, Electrical Engineering +16

Scaling constraints imposed by self-heating in submicron SOI MOSFET's

D.A. Dallmann, K. Shenai · IEEE Transactions on Electron Devices · 1995 · 70 citations

Engineering, Electrical Engineering, Microelectronics +16

Suppression of the floating-body effect in partially-depleted SOI MOSFETs with SiGe source structure and its mechanism

Akira Nishiyama, O. Arisumi, M. Yoshimi · IEEE Transactions on Electron Devices · 1997 · 31 citations

Engineering, Electrical Engineering, Electronic Materials +15

BESS: a source structure that fully suppresses the floating body effects in SOI CMOSFETs

M. Horiuchi, M. Tamura · IEEE Transactions on Electron Devices · 1998 · 15 citations

Engineering, Electrical Engineering, Materials Science +17