Concepedia

Forward Body Biasing

Forward Body Biasing is a dynamic voltage scaling technique in semiconductor device physics where a small positive voltage is applied to the body terminal of a MOSFET relative to its source to reduce the threshold voltage, thereby enhancing circuit performance while managing leakage power.

121

Publications

3.8K

Citations

520

Authors

147

Institutions

Publications per year

2017–2026

24

Variants

Forward Body Bias

Parents

Publications

121

A 233-MHz 80%-87% efficient four-phase DC-DC converter utilizing air-core inductors on package

P. Hazucha, G. Schrom, Jaehong Hahn et al. · IEEE Journal of Solid-State Circuits · 2005 · 301 citations

, , +17

Forward body bias for microprocessors in 130-nm technology generation and beyond

S. Narendra, A. Keshavarzi, B. Bloechel et al. · IEEE Journal of Solid-State Circuits · 2003 · 144 citations

, , +17

An Ultra-Low-Power Wideband Inductorless CMOS LNA With Tunable Active Shunt-Feedback

Mahdi Parvizi, Karim Allidina, Mourad N. El-Gamal · IEEE Transactions on Microwave Theory and Techniques · 2016 · 116 citations

, , +16

Domino logic with variable threshold voltage keeper

Volkan Kursun, Eby G. Friedman · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2003 · 113 citations

, , +17

A Thermal Energy Harvesting Power Supply With an Internal Startup Circuit for Pacemakers

Mohammadreza Ashraf, Nasser Masoumi · IEEE Transactions on Very Large Scale Integration (VLSI) Systems · 2015 · 99 citations

, , +14

1–5 of 121

Authors

520

  1. SN
    S. Narendra

    Intel (United States), United States

    5 publications · 569 citations

    5

    h-index

  2. VD
    Vivek De

    Intel (United States), United States

    5 publications · 525 citations

    5

    h-index

  3. BB
    B. Bloechel

    Intel (United States), United States

    5 publications · 569 citations

    5

    h-index

  4. SB
    Shekhar Borkar

    Intel (United States), United States

    5 publications · 569 citations

    5

    h-index

  5. KR
    Kaushik Roy

    Purdue University West Lafayette, United States

    4 publications · 185 citations

    4

    h-index

1–5 of 520

Institutions

147

  1. Intel (United States)

    Santa Clara, United States

    8 h-index

    50 publications

    5.1K citations

  2. STMicroelectronics (France)

    Montrouge, France

    5 h-index

    14 publications

    284 citations

  3. Purdue University West Lafayette

    West Lafayette, United States

    4 h-index

    13 publications

    538 citations

  4. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    4 h-index

    9 publications

    198 citations

  5. National Taiwan University

    Taipei, Taiwan

    4 h-index

    15 publications

    404 citations

  6. University of California, Berkeley

    Berkeley, United States

    4 h-index

    18 publications

    550 citations

  7. Texas Instruments (United States)

    Dallas, United States

    3 h-index

    7 publications

    148 citations

  8. Amrita Vishwa Vidyapeetham

    Coimbatore, India

    3 h-index

    8 publications

    174 citations

1–8 of 147

Venues

  1. 7

    h-index

  2. IEEE Microwave and Wireless Components Letters

    6 publications · 264 citations

    6

    h-index

  3. IEEE Transactions on Electron Devices

    4 publications · 159 citations

    4

    h-index

  4. Solid-State Electronics

    4 publications · 58 citations

    4

    h-index

  5. IEEE Journal of Solid-State Circuits

    4 publications · 609 citations

    4

    h-index

1–5