M. Horiuchi

Silicon on thin BOX: a new paradigm of the CMOSFET for low-power and high-performance application featuring wide-range back-bias control

Ryuta Tsuchiya, M. Horiuchi, S. Kimura et al. · 2005 · 143 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +13

Low power SRAM menu for SOC application using Yin-Yang-feedback memory cell technology

Masanao Yamaoka, Kensuke Osada, Ryuta Tsuchiya et al. · 2004 · 98 citations

Low-power Electronics, Non-volatile Memory, Electrical Engineering +13

Three-dimensional solid-phase-epitaxial regrowth from As+-implanted Si

M. Horiuchi, M. Tamura, Shigeru Aoki · Journal of Applied Physics · 1989 · 28 citations

Materials Science, As+-implanted Si, Ion Implantation +12

SOLID-II: High-voltage high-gain kilo-Ångstrom-channel-length CMOSFET's using Silicide with self-aligned ultrashallow (3S) junction

M. Horiuchi, Kohei Yamaguchi · IEEE Transactions on Electron Devices · 1986 · 19 citations

Femto-second CMOS technology with high-k offset spacer and SiN gate dielectric with oxygen-enriched interface

Ryuta Tsuchiya, K. Ohnishi, M. Horiuchi et al. · 2003 · 15 citations

Low-power Electronics, Electrical Engineering, 70-Nm Technology Node +13