2005 · 143 citations · 5 references
EngineeringComputer EngineeringElectrical EngineeringLow-power DesignMicroelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyDevice ScalingDynamic Power ReductionIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsFeedbackHigh PerformanceIon Implantation EffectsMemory Circuit DesignMetal GatesThreshold VoltageThreshold Voltage ControlUltra-low-power Cmos
We demonstrate a new MOSFET on ultra-thin BOX that allows wide-range back-bias control in low-power and high-performance applications. The back gate is effective not only to increase the drive current by about 20% in active mode but also in reduce the off-current by an order of magnitude in stand-by mode. We have also demonstrated tunable-threshold-voltage technology for devices with metal gates and ion implantation for V/sub th/ control. The target V/sub th/ for low-power applications was achieved by using ion implantation for V/sub th/ control. We propose a 6-transistor SRAM memory cell in which we obtain even more benefit from the new device structure by adding a feedback mechanism. A proposed 6-Tr SRAM memory cell is shown to dramatically improve SNM characteristics at the 65-nm technology nodes, and this effect will also apply at finer nodes.
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Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation
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Nickel silicide metal gate FDSOI devices with improved gate oxide leakage
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