K. Ohnishi - Concepedia

Author

K. Ohnishi

Also Known As

K Ohnishi, K. Ohnishi, K.. Ohnishi, KATSUYUKI OHNISHI, Katsuyuki OHNISHI, Katsuyuki Ohnishi, Koji Ohnishi

Publications

242

Citations

H-Index

Concepts

All Affiliations

K. Ohnishi is an author at Hitachi (Japan) specializing in applied physics, electrical engineering, and engineering.

#	Concept	H-Index	Publications	Citations
1	Engineering	4	4	134
2	Applied Physics	4	4	134
3	Electrical Engineering	4	4	134
4	Medicine	1	1	29
5	Gastroenterology	1	1	29

K. Ohnishi

Publications

163

Citations

H-Index

Page 1

	Year	Citations
Negative bias temperature instability of pMOSFETs with ultra-thin SiON gate dielectrics Shigeo Tsujikawa, Toshiyuki Mine, Kenji Watanabe, Electrical EngineeringEngineeringPhysicsNanoelectronicsStress-induced Leakage Current	2003	75
Experimental evidence for the generation of bulk traps by negative bias temperature stress and their impact on the integrity of direct-tunneling gate dielectrics Shigeo Tsujikawa, Kenji Watanabe, Ryuta Tsuchiya, Positive Bias StressElectrical EngineeringSemiconductor DeviceEngineeringExperimental Evidence	2004	31
EXTRINSIC SYMPATHETIC REINNERVATION AFTER INTESTINAL TRANSPLANTATION IN RATS Hidenori Kiyochi, ATSUMI ONO, Naritaka Yamamoto, Transplantation Regenerative MedicineTransplantation SurgeryExtrinsic ReinnervationIntestinal TransplantationSympathetic Nervous System	1995	29
Femto-second CMOS technology with high-k offset spacer and SiN gate dielectric with oxygen-enriched interface Ryuta Tsuchiya, K. Ohnishi, M. Horiuchi, Low-power ElectronicsElectrical Engineering70-Nm Technology NodeEngineeringOxygen-enriched Interface	2003	15
A raised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1-μm CMOS ULSIs T. Uchino, T. Shiba, K. Ohnishi, Electrical EngineeringEngineeringIn-situ P-doped SigeContact WindowsNanoelectronics	2002	13

Page 1