Mohammed Tanvir Quddus

Efficacy of Charge Sharing in Reshaping the Surface Electric Field in High-Voltage Lateral RESURF Devices

Mohamed A. Imam, Mohammed Tanvir Quddus, Jeff C. Adams et al. · IEEE Transactions on Electron Devices · 2004 · 76 citations

Device Modeling, Electrical Engineering, Engineering +12

Design and optimization of double-resurf high-voltage lateral devices for a manufacturable process

Mohamed A. Imam, Zia Hossain, Mohammed Tanvir Quddus et al. · IEEE Transactions on Electron Devices · 2003 · 71 citations

Low-power Electronics, Optimal Processing Window, Electrical Engineering +13

Unified model for QBD prediction for thin gate oxide MOS devices with constant voltage and current stress

Mohammed Tanvir Quddus, Thomas A. DeMassa, Julian J. Sanchez · Microelectronic Engineering · 2000 · 23 citations

Device Modeling, Electrical Engineering, Semiconductor Device +9

Surface plasmons and breakdown in thin silicon dioxide films on silicon

Jong‐Hyun Kim, Julian J. Sanchez, Thomas A. DeMassa et al. · Journal of Applied Physics · 1998 · 16 citations

Engineering, Hole Injection, Optoelectronic Devices +18

Physics-Based Breakdown Voltage Optimization of Trench MOS Barrier Schottky Rectifiers

Alvaro D. Latorre-Rey, Mihir Mudholkar, Mohammed Tanvir Quddus · IEEE Transactions on Electron Devices · 2018 · 13 citations

Device Modeling, Electrical Engineering, Engineering +11