Alvaro D. Latorre-Rey

A <inline-formula> <tex-math notation="LaTeX">$\Pi$ </tex-math> </inline-formula>-Shaped Gate Design for Reducing Hot-Electron Generation in GaN HEMTs

Alvaro D. Latorre-Rey, John D. Albrecht, Marco Saraniti · IEEE Transactions on Electron Devices · 2018 · 30 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13

Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications

Han Wui Then, M. Radosavljević, Qiang Yu et al. · IEEE Microwave and Wireless Technology Letters · 2023 · 30 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +15

Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (R_ON xQ_GG) of 3.1 mohm-nC at 40V and f_T/f_MAX of 130/680GHz

Han Wui Then, M. Radosavljević, Pratik Koirala et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 23 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +15

Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction

A. Ortíz-Conde, Francisco J. García-Sánchez, Juan Muci et al. · Microelectronics Reliability · 2009 · 21 citations

Device Modeling, Electrical Engineering, Engineering +6

Hot electron generation under large-signal radio frequency operation of GaN high-electron-mobility transistors

Alvaro D. Latorre-Rey, Flavio F. M. Sabatti, John D. Albrecht et al. · Applied Physics Letters · 2017 · 20 citations

Wide-bandgap Semiconductor, Electrical Engineering, Defect Generation +11