Unified model for QBD prediction for thin gate oxide MOS devices with constant voltage and current stress

Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation

K.F. Schuegraf, Chenming Hu · IEEE Transactions on Electron Devices · 1994 · 540 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical breakdown in thin gate and tunneling oxides

Ih-Chin Chen, S. Holland, Chenming Hu · IEEE Transactions on Electron Devices · 1985 · 484 citations

Engineering, Electrical Engineering, Physics +17

Anode hole injection and trapping in silicon dioxide

D. J. DiMaria, E. Cartier, D. A. Buchanan · Journal of Applied Physics · 1996 · 209 citations

Engineering, Electrical Engineering, Materials Science +17

Substrate hole current and oxide breakdown

I. C. Chen, S. Holland, K.K. Young et al. · Applied Physics Letters · 1986 · 203 citations

Engineering, Electrical Engineering, Microelectronics +16

Quantum yield of electron impact ionization in silicon

Chi Chang, Chenming Hu, R.W. Brodersen · Journal of Applied Physics · 1985 · 173 citations

Engineering, Electrical Engineering, Physics +17