O. Arisumi

Ferroelectric Properties of Pb(Zi, Ti)O₃ Capacitor with Thin SrRuO₃ Films within Both Electrodes

Toyota Morimoto, O. Hidaka, Kouji Yamakawa et al. · Japanese Journal of Applied Physics · 2000 · 73 citations

Materials Science, Multiferroics, Electrical Engineering +14

Suppression of the floating-body effect in SOI MOSFET's by the bandgap engineering method using a Si/sub 1-x/Ge/sub x/ source structure

M. Yoshimi, Mamoru Terauchi, Akira Nishiyama et al. · IEEE Transactions on Electron Devices · 1997 · 47 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Novel Pb(Ti, Zr)O₃(PZT) Crystallization Technique Using Flash Lamp for Ferroelectric RAM (FeRAM) Embedded LSIs and One Transistor Type FeRAM Devices

K. Yamakawa, Keitaro Imai, O. Arisumi et al. · Japanese Journal of Applied Physics · 2002 · 31 citations

Engineering, Crystal Growth Technology, Ferroelectric Random-access Memory +18

Suppression of the floating-body effect in partially-depleted SOI MOSFETs with SiGe source structure and its mechanism

Akira Nishiyama, O. Arisumi, M. Yoshimi · IEEE Transactions on Electron Devices · 1997 · 31 citations

Electrical Engineering, Sige Layers, Engineering +9

Formation of SiGe Source/Drain Using Ge Implantation for Floating-Body Effect Resistant SOI MOSFETs

Akira Nishiyama, O. Arisumi, Mamoru Terauchi et al. · Japanese Journal of Applied Physics · 1996 · 11 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +10