Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl-beryllium

Gas source MBE of InP and Ga<i>x</i>In1−<i>x</i>P<i>y</i>As1−<i>y</i> : Materials properties and heterostructure lasers

M. B. Panish, H. Temkin, S. Sumski · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 129 citations

Engineering, Materials Engineering, Materials Science +16

Variation of intervalence band absorption with hole concentration in <i>p</i>-type InP

H. C. Casey, P. L. Carter · Applied Physics Letters · 1984 · 77 citations

Natural Sciences, Materials Engineering, Materials Science +16

Chemical beam epitaxy of indium phosphide

J.L. Benchimol, F. Alaoui, Yang Gao et al. · Journal of Crystal Growth · 1990 · 72 citations

Engineering, Materials Engineering, Materials Science +12

Gaseous dopant sources in MOMBE/CBE

M. Weyers, J. Musolf, D. Marx et al. · Journal of Crystal Growth · 1990 · 57 citations

Natural Sciences, Chemistry, Materials Science +5

Metalorganic molecular beam epitaxy of strained multi-quantum-wells for 1.3 μm wavelength laser diodes

Hideo Sugiura, Manabu Mitsuhara, H. Oohashi et al. · Journal of Crystal Growth · 1995 · 52 citations

Engineering, Materials Engineering, Materials Science +16